Ask about this productRelated genes to: CCM2 antibody
- Gene:
- CCM2 NIH gene
- Name:
- CCM2 scaffold protein
- Previous symbol:
- C7orf22
- Synonyms:
- MGC4607, OSM
- Chromosome:
- 7p13
- Locus Type:
- gene with protein product
- Date approved:
- 2003-07-14
- Date modifiied:
- 2019-04-23
Related products to: CCM2 antibody
Related articles to: CCM2 antibody
- Cerebral cavernous malformations (CCM) are angiographically occult vascular anomalies of the brain, characterized by dilated capillaries, increased vascular permeability, and loss of endothelial junctional protein complexes. Loss-of-function mutations in one of the three genes, namely KRIT1/CCM1, CCM2, and PDCD10/CCM3, have been associated with the disease pathogenesis, although the contribution of other genetic determinants besides CCM genes has been recently identified. Despite recent advances in understanding the molecular mechanism of the disease, the current lack of therapies and its unpredictable clinical behavior represent a significant challenge in the identification of diagnostic biomarkers. ADGRL4/ETLD1 (epidermal growth factor, latrophilin and seven transmembrane domain-containing protein 1), a G-protein coupled receptor (GPCR) protein is a known biomarker of angiogenesis and inflammation, and it has been suggested to be a key therapeutic target for stroke and high-grade gliomas. However, the relevance of ELTD1 in CCM pathogenesis remains unexplored. - Source: PubMed
Publication date: 2026/05/08
Perrelli AndreaAhmed AshraqatOnisiforou AnnaBoulday GwenolaZalvide JuanPombo Celia MMartínez José EPaolini AlessioAbdelilah-Seyfried SalimPetrakakis IoannisKunz Wolfram SGeffers RobertHartmann ChristianBini WalterBaltsavias GerasimosSamii AmirBertalanffy HelmutRetta Saverio FGlading Angela JKar Souvik - Multistate non-volatile ferroelectric memories are promising for in-memory and neuromorphic computing owing to their high speed and low power operation. Yet, overcoming the intrinsic bi-stability of ferroelectric switching to reliably achieve multiple polarization states remains a major challenge. Here, we demonstrate robust multi-level polarization states-exhibiting antiferroelectric-like hysteresis loops-through selective domain switching in compositionally graded BiFeO-BaTiO epitaxial thin films. These films display well-separated switching fields and large polarization contrast between adjacent states (ΔP > 40 µC/cm). Our systematic studies further revealed that the multistate behaviour is attributed to the pinning of ferroelectric domains by oppositely aligned defect dipoles, whose configuration is strongly correlated with the compositional gradient. By engineering this gradient, we effectively tune the internal field and reshape the ferroelectric hysteresis, enabling deterministic control over multiple stable states. This study introduces a new strategy for tailoring ferroelectric energy landscapes, paving the way for high-density, low-power, and adaptive ferroelectric memory and neuromorphic architectures. - Source: PubMed
Publication date: 2026/04/05
Li JinyangLiu SuzhenWang TaoRen ZhongqiGao ChengGong FenghuiLv XiaodongSu ChenDas SujitPan HaoTang YunlongChen Zuhuang - Advanced electronic systems rely heavily on the development of high-performance dielectric ceramic capacitors. However, achieving simultaneous improvements in both recoverable energy density (W) and efficiency (η) under moderate electric fields remains a significant challenge for practical applications. In this study, we engineer a dual-phase perovskite structure in (BiNa)TiO-based ceramics through an in situ phase separation to address this issue. The resulting grain-separated dual-phase ceramics exhibit two interacting relaxor phases with distinct nanoscale polar structures and heterogeneous stress, resulting in large polarization, low polarization hysteresis, and delayed polarization saturation. Additionally, a relatively high breakdown strength is achieved through an increased bandgap, reduced oxygen vacancy concentration, and enhanced electrical homogeneity, complemented by the dual-phase structure, which increases the length and the meandering of the electrical-tree propagation path. As a result, the optimized dual-phase ceramic exhibits exceptional overall performance, with a high energy-storage coefficient of 0.014 µC/cm accompanied by a large W of 5.84 J/cm and an ultrahigh η of 92% under 420 kV/cm, along with excellent stability, and robust charge-discharge characteristics. This study presents a practical strategy for designing high-performance dielectric energy-storage ceramics that operate under moderate electric fields, providing valuable insights for tailoring functional properties in ferroelectrics. - Source: PubMed
Publication date: 2026/03/31
Zhang ZhouyeZhang JiajuZhou ZhigangBai WangfengZheng PengFan QiaolanWu ShitingWang TingLiang HongyanZhu WeijunShi XuxiaLi YongZhai Jiwei - The discovery of novel ferroelectric compounds and the modulation of polarization in established ferroelectric materials have persistently represented crucial and highly dynamic areas of research within the field of ferroelectric materials science. Here we demonstrate a structural templating strategy to reconfigure Aurivillius-phase oxides into metastable ferroelectric phases with tailored polarization. By stabilizing a metastable WO phase within a BiWO framework, we achieve robust out-of-plane polarization (10 µC/cm) in textured WO/BiWO films, contrasting the purely in-plane polarization of pristine BiWO. First-principles calculations and atomic-resolution scanning transmission electron microscopy unveil a WO phase with oxygen displacement-driven ferroelectricity. Prototype ferroelectric field-effect transistors and memristors fabricated from these films exhibit robust switching ratios (>10) and thermal stability up to 350 °C. This work not only expands the family of binary ferroelectric oxides but also establishes a generalizable paradigm for overcoming polarization-directionality constraints in layered ferroelectrics. - Source: PubMed
Publication date: 2026/03/13
Zhou SongZhong ShulinZhang SonggeLiao LeiHuang SiyuanZhang ZeZheng DongfengLi NaYu HuaSong ChuangyeBai XuedongZhang GuangyuLu YunhaoWu Kehui - Ferroelectric HfO-based materials are promising candidates for memory applications because of their compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the ferroelectric phase of HfO is not the ground state, and collective displacements of oxygen atoms could generate multiple polarization switching paths, causing variations in measured polar magnitude across different experiments. To date, the mechanisms underpinning ferroelectric phase stabilization and the observed variations in polarization remain poorly understood. Here, by combining density functional theory (DFT) simulations and experimental measurements, we propose that (111) crystallography orientation confinement in HfZrO film can effectively stabilize the ferroelectric phase. Moreover, to account for different polarization magnitudes observed experimentally, we calculate the electric polarizations along different crystal orientations, incorporating both crossing and non-crossing switching paths. These results show that all the crossing switching paths always yield high polarizations. However, relatively high switching barriers in crossing paths make them less likely to occur in measurements. Finally, to achieve high polarization together with low switching barriers, specific oxygen vacancies and cation dopants that facilitate crossing pathways and yield the highest polarization (∼70 µC/cm) are determined. These insights clarify the preferred (111) orientation and polarization behavior of HfO-based films and advance the design of high-performance ferroelectric devices. - Source: PubMed
Publication date: 2026/03/02
Sawyerr FatoyeSun YongqingZhang ZekunJia KangLv ShuningHu QiShi ShuHuang QiushiZhang XieFan XiaoliLiu Li-MinWen ShifengWen ZhengCao TengfeiChen Jingsheng