Ask about this productRelated genes to: CCM2 antibody
- Gene:
- CCM2 NIH gene
- Name:
- CCM2 scaffold protein
- Previous symbol:
- C7orf22
- Synonyms:
- MGC4607, OSM
- Chromosome:
- 7p13
- Locus Type:
- gene with protein product
- Date approved:
- 2003-07-14
- Date modifiied:
- 2019-04-23
Related products to: CCM2 antibody
Related articles to: CCM2 antibody
- Actin cytoskeleton dysregulation contributes to vascular anomalies such as cerebral cavernous malformation (CCM). Talin rod domain containing-1 (TLNRD1) has been reported to interact with cerebral cavernous malformations 2 protein (CCM2), yet the downstream signaling remains debated, as previous studies have described opposite directions of Krueppel-like factor 2/4 (KLF2/4) changes after TLNRD1 depletion. Here, we combined biochemical analyses, structural modeling, transcriptomics, and single-cell network perturbation to examine the TLNRD1-CCM2 axis in endothelial cells. Coimmunoprecipitation and mass spectrometry confirmed the association between TLNRD1 and the CCM complex. Furthermore, protein docking predicted a stable TLNRD1-CCM2 interface (ΔG ≈ -50.36 kcal/mol) supported by prominent hydrogen bonds. Bulk RNA sequencing following TLNRD1 knockdown identified 677 differentially expressed genes, which were heavily enriched for actin cytoskeleton organization, with limited support for activation of the canonical MEKK3-KLF2/4 program. To assess KLF2/4 more directly, we analyzed human CCM single-cell RNA sequencing using scTenifoldKnk alongside complementary in vitro perturbations. Across these orthogonal analyses, KLF2 and KLF4 showed little to no consistent transcriptional alterations. Instead, TLNRD1 perturbation prominently altered endothelial F-actin stress fiber formation. Together, these data support a model in which TLNRD1 preferentially modulates endothelial cytoskeletal remodeling largely independent of overt KLF2/4 transcriptional shifts, helping to contextualize previous discrepancies and refining our understanding of its role in vascular biology. - Source: PubMed
Publication date: 2026/06/01
Zhang YuchongQiu ShoujiHu ChengkaiFu WeiguoWang ChenjiWang Lixin - Recently, high-endurance ferroelectric HfO is highly desirable since the emerging of in-memory computing requires non-volatile memories not only to store data but also to execute computation, challenging writing/erasure switching reliability. Understanding and exploitation of the polarization fatigue diagram are crucial for improving endurance performances. Here, we show fatigue-resistant Sm:HfO thin films by modulating grain boundaries (GBs) in orientation-controllable orthorhombic phase. On GBs, orientation discontinuity raises energy levels of O 2p orbitals due to lattice distortion, which promote electron accumulation and yield a high-symmetry structural transform at the boundary, facilitating 90° switching of out-of-plane domains because of lowered switching barrier. Then the domains are frozen in plane by the charged GBs and polarization fatigue takes place. By eliminating GBs associated with phase transform, remarkably-improved fatigue resistance is achieved in uniform 180° switching, which exhibits the increase of fatigue-free endurance by 200 times to 2.0 × 10 cycles with, more importantly, a large field-cycling non-volatile polarization of ∼60 µC/cm, showing the state-of-the-art endurance performances in hafnium oxides. Roadmaps of the fatigue scenarios are given based on key roles of GBs in domain configurations and switching pathways. Our findings open a new perspective for fatigue studying and guide the material design of high-reliability hafnium oxide memories. - Source: PubMed
Publication date: 2026/07/03
Li JiufuLin ZehaoJing XixiangZheng WeijieWang ZhenJiang XinyuXu JiboZheng ChunyanLiu XiaohuiFu BeibeiHuang HaoliangWang Huan-HuaWu DiSong KepengCao TengfeiWen Zheng - Adults with unexplained neurologic presentations often undergo extensive evaluations without timely diagnosis. Evidence supporting the clinical utility of rapid whole-genome sequencing (rWGS) in hospitalized adult populations remains limited. We evaluated the diagnostic yield of rWGS in adults hospitalized for unexplained neurologic manifestations and assessed clinical predictors of a phenotype-concordant genetic diagnosis. - Source: PubMed
Publication date: 2026/06/16
Amanat ManToledano MichelSchimmenti Lisa APichurin Pavel NLanpher Brendan CDeyle David RTan Queenie K GIverson GabrielleCera AlannaGavrilova RalitzaDhamija Radhika - Flash lamp annealing (FLA) enables sub-millisecond thermal processing with low thermal budgets, but the extreme heating and cooling rates have so far prevented direct, time-resolved temperature metrology and observation of structural transformations in nanometer-scale thin films. We present a custom FLA system, integrated with halogen lamp annealing, for time-resolved synchrotron grazing-incidence X-ray diffraction (GIXRD), achieving 200 µs temporal resolution to directly track reversible and irreversible structural evolution during FLA. We achieve simultaneous real-time surface temperature measurement and visualization of structural transformation in ultra-thin hafnia-based ferroelectric layers of intensive interest for future non-volatile memory applications. The measurements reveal two distinct characteristic timescales: rapid post-flash thermal relaxation of the metal-ferroelectric-metal stack and a slower phase evolution within the ferroelectric layer. By correlating transient thermal profiles with diffraction signatures, we quantify the thermal budget required to induce the desired ferroelectric phase and show that it is several orders of magnitude lower than conventional annealing, while still achieving a large remanent polarization of 36 µC/cm. This method enables direct, time-resolved observation of ultrafast crystallization and phase transformation processes in nanometer-scale thin films and provides a general experimental framework for studying pulsed thermal processing of nanoscale materials for a wide range of advanced technologies. - Source: PubMed
Publication date: 2026/06/15
Ruano Arens Cristian ESaini BalreenThampy VivekVan Campen Douglas GArthur RossTsai WilmanMcIntyre Paul CBaniecki John D - Halide perovskites are widely recognized for their exceptional optoelectronic properties, cost-effective fabrication, and tunable chemical compositions, which make them highly versatile in photovoltaics, LEDs, and mechanical energy harvesting. Here we have developed a novel manganese-based lead-free Benzyl trimethyl ammonium manganese bromide (BTMB) perovskite in the polar non-centro symmetric space group P2 system, which shows strong piezoresponse properties measured using sophisticated Piezo Force Microscopy (PFM) and Switching Spectroscopy Piezo Force Microscopy (SS-PFM). BTMB exhibits a direct bandgap of 4.3 eV along with a bright luminescence in the visible region due to ligand-to-metal charge transfer mechanism. The material demonstrates a polarization saturation value of 4.0 µC/cm with d value of 3.95 pC/N measured using quasi electrostatic d meter on a pellet of thickness 1.5 mm. PFM results show notable ±180 phase changes upon application of bias with characteristic butterfly and hysteresis loop, a clear indication of reversal of polarization switching. Further, we have fabricated a mechanical energy-harvesting device by incorporating BTMB into polydimethylsiloxane (PDMS) polymer matrix containing 30 weight percent of the material to achieve a peak output voltage of 1.1 V and a peak current density of 250 nA/cm with an achievable output power of ∼1.1 µW/cm at RT. - Source: PubMed
Publication date: 2026/06/11
Pradhan PrabhanjanPaul SwadeshPradhan Ranjit KumarDatta AnujaPatra Biplab K