Ask about this productRelated genes to: CCM2 antibody
- Gene:
- CCM2 NIH gene
- Name:
- CCM2 scaffold protein
- Previous symbol:
- C7orf22
- Synonyms:
- MGC4607, OSM
- Chromosome:
- 7p13
- Locus Type:
- gene with protein product
- Date approved:
- 2003-07-14
- Date modifiied:
- 2019-04-23
Related products to: CCM2 antibody
Related articles to: CCM2 antibody
- Multistate non-volatile ferroelectric memories are promising for in-memory and neuromorphic computing owing to their high speed and low power operation. Yet, overcoming the intrinsic bi-stability of ferroelectric switching to reliably achieve multiple polarization states remains a major challenge. Here, we demonstrate robust multi-level polarization states-exhibiting antiferroelectric-like hysteresis loops-through selective domain switching in compositionally graded BiFeO-BaTiO epitaxial thin films. These films display well-separated switching fields and large polarization contrast between adjacent states (ΔP > 40 µC/cm). Our systematic studies further revealed that the multistate behaviour is attributed to the pinning of ferroelectric domains by oppositely aligned defect dipoles, whose configuration is strongly correlated with the compositional gradient. By engineering this gradient, we effectively tune the internal field and reshape the ferroelectric hysteresis, enabling deterministic control over multiple stable states. This study introduces a new strategy for tailoring ferroelectric energy landscapes, paving the way for high-density, low-power, and adaptive ferroelectric memory and neuromorphic architectures. - Source: PubMed
Publication date: 2026/04/05
Li JinyangLiu SuzhenWang TaoRen ZhongqiGao ChengGong FenghuiLv XiaodongSu ChenDas SujitPan HaoTang YunlongChen Zuhuang - Advanced electronic systems rely heavily on the development of high-performance dielectric ceramic capacitors. However, achieving simultaneous improvements in both recoverable energy density (W) and efficiency (η) under moderate electric fields remains a significant challenge for practical applications. In this study, we engineer a dual-phase perovskite structure in (BiNa)TiO-based ceramics through an in situ phase separation to address this issue. The resulting grain-separated dual-phase ceramics exhibit two interacting relaxor phases with distinct nanoscale polar structures and heterogeneous stress, resulting in large polarization, low polarization hysteresis, and delayed polarization saturation. Additionally, a relatively high breakdown strength is achieved through an increased bandgap, reduced oxygen vacancy concentration, and enhanced electrical homogeneity, complemented by the dual-phase structure, which increases the length and the meandering of the electrical-tree propagation path. As a result, the optimized dual-phase ceramic exhibits exceptional overall performance, with a high energy-storage coefficient of 0.014 µC/cm accompanied by a large W of 5.84 J/cm and an ultrahigh η of 92% under 420 kV/cm, along with excellent stability, and robust charge-discharge characteristics. This study presents a practical strategy for designing high-performance dielectric energy-storage ceramics that operate under moderate electric fields, providing valuable insights for tailoring functional properties in ferroelectrics. - Source: PubMed
Publication date: 2026/03/31
Zhang ZhouyeZhang JiajuZhou ZhigangBai WangfengZheng PengFan QiaolanWu ShitingWang TingLiang HongyanZhu WeijunShi XuxiaLi YongZhai Jiwei - The discovery of novel ferroelectric compounds and the modulation of polarization in established ferroelectric materials have persistently represented crucial and highly dynamic areas of research within the field of ferroelectric materials science. Here we demonstrate a structural templating strategy to reconfigure Aurivillius-phase oxides into metastable ferroelectric phases with tailored polarization. By stabilizing a metastable WO phase within a BiWO framework, we achieve robust out-of-plane polarization (10 µC/cm) in textured WO/BiWO films, contrasting the purely in-plane polarization of pristine BiWO. First-principles calculations and atomic-resolution scanning transmission electron microscopy unveil a WO phase with oxygen displacement-driven ferroelectricity. Prototype ferroelectric field-effect transistors and memristors fabricated from these films exhibit robust switching ratios (>10) and thermal stability up to 350 °C. This work not only expands the family of binary ferroelectric oxides but also establishes a generalizable paradigm for overcoming polarization-directionality constraints in layered ferroelectrics. - Source: PubMed
Publication date: 2026/03/13
Zhou SongZhong ShulinZhang SonggeLiao LeiHuang SiyuanZhang ZeZheng DongfengLi NaYu HuaSong ChuangyeBai XuedongZhang GuangyuLu YunhaoWu Kehui - Ferroelectric HfO-based materials are promising candidates for memory applications because of their compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the ferroelectric phase of HfO is not the ground state, and collective displacements of oxygen atoms could generate multiple polarization switching paths, causing variations in measured polar magnitude across different experiments. To date, the mechanisms underpinning ferroelectric phase stabilization and the observed variations in polarization remain poorly understood. Here, by combining density functional theory (DFT) simulations and experimental measurements, we propose that (111) crystallography orientation confinement in HfZrO film can effectively stabilize the ferroelectric phase. Moreover, to account for different polarization magnitudes observed experimentally, we calculate the electric polarizations along different crystal orientations, incorporating both crossing and non-crossing switching paths. These results show that all the crossing switching paths always yield high polarizations. However, relatively high switching barriers in crossing paths make them less likely to occur in measurements. Finally, to achieve high polarization together with low switching barriers, specific oxygen vacancies and cation dopants that facilitate crossing pathways and yield the highest polarization (∼70 µC/cm) are determined. These insights clarify the preferred (111) orientation and polarization behavior of HfO-based films and advance the design of high-performance ferroelectric devices. - Source: PubMed
Publication date: 2026/03/02
Sawyerr FatoyeSun YongqingZhang ZekunJia KangLv ShuningHu QiShi ShuHuang QiushiZhang XieFan XiaoliLiu Li-MinWen ShifengWen ZhengCao TengfeiChen Jingsheng - Regulated expression of Kruppel like factor (KLF) transcription factors is essential for normal maintenance of endothelial cells, but loss of either K-Rev interaction trapped 1 (KRIT1) or cerebral cavernous malformations 2 (CCM2) proteins results in significant over-expression of KLF4 protein, causing the cerebrovascular disorder, cerebral cavernous malformations. Here, combining knockdown and reconstitution in an endothelial cell line, with co-immunoprecipitation, biophysical analysis of purified proteins, and co-crystallography, we find that to restrain KLF4 expression, two CCM2 proteins must cluster on a single KRIT1, with the PTB domain of each CCM2 protein binding either the second or third NPxF motif within KRIT1. This clustering of two PTB domains to a single peptide reveals a previously unobserved mechanism for PTB domain recruitment to partner proteins. Overall, our data support a model where clustering of two CCM2 molecules to one KRIT1 is required for normal regulation of expression of KLF4 transcription factor. - Source: PubMed
Publication date: 2026/02/13
Huet-Calderwood ClotildeFisher Oriana SDas SreyaSu Valerie LBoggon Titus JCalderwood David A