Ask about this productRelated genes to: CCM2 antibody
- Gene:
- CCM2 NIH gene
- Name:
- CCM2 scaffold protein
- Previous symbol:
- C7orf22
- Synonyms:
- MGC4607, OSM
- Chromosome:
- 7p13
- Locus Type:
- gene with protein product
- Date approved:
- 2003-07-14
- Date modifiied:
- 2019-04-23
Related products to: CCM2 antibody
Related articles to: CCM2 antibody
- ADAMTS5 cleaves chondroitin sulfate proteoglycans such as versican and aggrecan. Adamts5-/- mouse model exhibited aortic anomalies, and increased expression of Adamts4/5 led to excessive versican degradation and reduced cardiac jelly. In zebrafish, knockdown of adamts5 rescued the cardiac phenotype conferred by ccm1-deficiency in zebrafish embryos. Here, we generated an ADAMTS5 knockin mouse model (ADAMTS5KI) to characterize the effect of induced expression of human ADAMTS5 on the cardiovascular system in mice. Sustained expression of ADAMTS5 in the endothelium diminished cardiac jelly formation and proteoglycan deposition in the atrioventricular (AV) cushion and led to cardiac development arrest. Induced expression of ADAMTS5 in the endothelium of postnatal mice impaired cardiac valve patterning. Expression of ADAMTS5 in brain endothelial cells did not confer an obvious vascular defect. However, expression of ADAMTS5 in brain endothelial cells of Ccm2-deficient mice aggravated CCM lesion burden and shortened the life span of Ccm2-deficient mice. These findings suggest that tight regulation of ADAMTS5 in the endothelium is essential for cardiovascular development and structural integrity, and ADAMTS5 interacts with CCM signaling, contributing to CCM disease progression. - Source: PubMed
Publication date: 2026/05/18
Yang XiZhang JieyingDai ZifengYang TianziXie LiyaGao FeiZheng XiangjianHan Zhiming - Hafnium oxide thin films have been extensively investigated for high-speed and low-power memory applications. Herein, we investigated the influence of oxygen vacancies and external stress on the ferroelectric characteristics of Al-doped HfO (HfAlO). Compared with HfAlO with 14% oxygen vacancies, films with 21% oxygen vacancies could lower the polarization switching barrier and increase the fraction of the ferroelectric phase. Furthermore, significant external stress promotes ferroelectric phase formation, thereby enhancing ferroelectric characteristics. The remanent polarization achieved with W electrodes (2Pr = 38 µC/cm) is about 18 times that of Au electrodes, owing to the lower thermal expansion coefficient of W electrodes. Density functional theory calculations and finite element analysis provide theoretical insights corroborating the experimental results, helping to pave the way for developing hafnium-based materials for next-generation in-memory computing applications. - Source: PubMed
Publication date: 2026/04/25
Li ZhenhaiYuan RuihongGuo XingcanHu YiqunLiu YongkaiYu JiajieXu KangliLi QingxuanWang TianyuSun QingqingZhang David WeiChen Lin - Ferroelectrics, featuring a natural switchable polarization, have motivated immense interest due to their transformative potential in electronics, micromechatronics and electro-optics. Despite the remarkable advances achieved, the high coercive field required to reconfigure robust chemical bonds in traditional ferroelectrics fundamentally precludes their applications in next-generation energy-efficient devices. Herein, we present an innovative chemical bonding engineering approach to develop a hybrid metal halide ferroelectric, (iso-amylammonium)CsGeI (ICGI), which demonstrates ultra-low barrier ferroelectricity. Through enhancing the chemical bonding anisotropy via ns lone pairs stereochemical expression, the Ge-I bonding in ICGI adopts an asymmetrical pyramidal coordination geometry, which breaks structural inversion symmetry and results in a large spontaneous polarization up to 19.09 µC/cm. Particularly, the smooth switching pathway refrained from abrupt breaking and reformation of weakened short-range bonding interactions results in a record-low coercive field < 0.35 kV/cm (corresponding to switching energy < 0.0575 J/cm), much lower than traditional ferroelectrics such as BaTiO (> 1.0 kV/cm) and HfO (> 1000 kV/cm). Furthermore, benefiting from the low barrier ferroelectricity, ICGI demonstrates a low electric field driven pronounced electrocaloric effect with an adiabatic ΔT/ΔE of 800 mK·cm/kV. This work encourages the targeted design of low barrier ferroelectrics, which sheds light on their applications in next-generation ultralow-power devices. - Source: PubMed
Publication date: 2026/05/12
Li XiaoqiWu ZiyangWang QianxiChen ShuangLiu XitaoSun ZhihuaLuo Junhua - Cerebral cavernous malformations (CCM) are angiographically occult vascular anomalies of the brain, characterized by dilated capillaries, increased vascular permeability, and loss of endothelial junctional protein complexes. Loss-of-function mutations in one of the three genes, namely KRIT1/CCM1, CCM2, and PDCD10/CCM3, have been associated with the disease pathogenesis, although the contribution of other genetic determinants besides CCM genes has been recently identified. Despite recent advances in understanding the molecular mechanism of the disease, the current lack of therapies and its unpredictable clinical behavior represent a significant challenge in the identification of diagnostic biomarkers. ADGRL4/ETLD1 (epidermal growth factor, latrophilin and seven transmembrane domain-containing protein 1), a G-protein coupled receptor (GPCR) protein is a known biomarker of angiogenesis and inflammation, and it has been suggested to be a key therapeutic target for stroke and high-grade gliomas. However, the relevance of ELTD1 in CCM pathogenesis remains unexplored. - Source: PubMed
Publication date: 2026/05/08
Perrelli AndreaAhmed AshraqatOnisiforou AnnaBoulday GwenolaZalvide JuanPombo Celia MMartínez José EPaolini AlessioAbdelilah-Seyfried SalimPetrakakis IoannisKunz Wolfram SGeffers RobertHartmann ChristianBini WalterBaltsavias GerasimosSamii AmirBertalanffy HelmutRetta Saverio FGlading Angela JKar Souvik - Multistate non-volatile ferroelectric memories are promising for in-memory and neuromorphic computing owing to their high speed and low power operation. Yet, overcoming the intrinsic bi-stability of ferroelectric switching to reliably achieve multiple polarization states remains a major challenge. Here, we demonstrate robust multi-level polarization states-exhibiting antiferroelectric-like hysteresis loops-through selective domain switching in compositionally graded BiFeO-BaTiO epitaxial thin films. These films display well-separated switching fields and large polarization contrast between adjacent states (ΔP > 40 µC/cm). Our systematic studies further revealed that the multistate behaviour is attributed to the pinning of ferroelectric domains by oppositely aligned defect dipoles, whose configuration is strongly correlated with the compositional gradient. By engineering this gradient, we effectively tune the internal field and reshape the ferroelectric hysteresis, enabling deterministic control over multiple stable states. This study introduces a new strategy for tailoring ferroelectric energy landscapes, paving the way for high-density, low-power, and adaptive ferroelectric memory and neuromorphic architectures. - Source: PubMed
Publication date: 2026/04/05
Li JinyangLiu SuzhenWang TaoRen ZhongqiGao ChengGong FenghuiLv XiaodongSu ChenDas SujitPan HaoTang YunlongChen Zuhuang