DNTT (2011bp)
- Known as:
- DNTT (2011bp)
- Catalog number:
- 000141A
- Product Quantity:
- 250ul
- Category:
- -
- Supplier:
- ABM
- Gene target:
- DNTT (2011bp)
Related genes to: DNTT (2011bp)
- Gene:
- DNTT NIH gene
- Name:
- DNA nucleotidylexotransferase
- Previous symbol:
- -
- Synonyms:
- TDT
- Chromosome:
- 10q24.1
- Locus Type:
- gene with protein product
- Date approved:
- 2001-06-22
- Date modifiied:
- 2016-10-05
Related products to: DNTT (2011bp)
Bovine deoxynucleotidyltransferase, terminal (DNTT) ELISA kit, Species Bovine, Sample Type serum, plasmaBovine DNA nucleotidylexotransferase(DNTT) ELISA kitBovine DNA nucleotidylexotransferase(DNTT) ELISA kit SpeciesBovineChicken deoxynucleotidyltransferase, terminal (DNTT) ELISA kit, Species Chicken, Sample Type serum, plasmaChicken DNA nucleotidylexotransferase(DNTT) ELISA kitChicken DNA nucleotidylexotransferase(DNTT) ELISA kit SpeciesChickenCLIA Bos taurus,Bovine,DNA nucleotidylexotransferase,DNTT,TDT,TDT,Terminal addition enzyme,Terminal deoxynucleotidyltransferase,Terminal transferaseCLIA Chicken,DNA nucleotidylexotransferase,DNTT,Gallus gallus,TDT,Terminal addition enzyme,Terminal deoxynucleotidyltransferase,Terminal transferaseCLIA DNA nucleotidylexotransferase,DNTT,Homo sapiens,Human,TDT,Terminal addition enzyme,Terminal deoxynucleotidyltransferase,Terminal transferaseCLIA DNA nucleotidylexotransferase,Dntt,Mouse,Mus musculus,TDT,Tdt,Terminal addition enzyme,Terminal deoxynucleotidyltransferase,Terminal transferaseDNMT3L Gene DNA (cytosine-5-)-methyltransferase 3-likeDnttDnttDNTT TDT antibody Ab host: RabbitDNTT TDT (C-term) Ig antibody Ab host: Rabbit Related articles to: DNTT (2011bp)
- Organic thin-film transistors based on dinaphtho[2,3-:2',3'-]thieno[3,2-]thiophene (DNTT) are attractive for low-cost, large-area electronics, but in unencapsulated devices, atmospheric oxidation generates charge traps whose electronic character-which product traps holes and which traps electrons-has not been mapped systematically. Here, 39 oxygen- and hydroxyl-related defect identities of DNTT are screened with the semi-empirical GFN2-xTB method, complemented by an a priori frontier reactivity index, and classified by the sign of the frontier-level shift. This sign obeys a simple rule: a net π-donating hydroxyl raises the HOMO and yields a hole trap, whereas a net π-accepting carbonyl or quinone lowers the frontier levels and yields a deep electron trap. Hybrid density-functional theory (B3LYP/def2-TZVP) confirms the sign rule and the ordering of the shifts across all closed-shell defect classes. The rule provides a compact, defect-level rationalisation of the well-known asymmetry whereby -type acenes tolerate air far better than -type ones. Finally, a hole trap of about 0.255 eV, measured by deep-level transient Fourier spectroscopy, is shown to be consistent with a hydroxyl-related origin, without claiming a unique microscopic assignment. - Source: PubMed
Publication date: 2026/08/05
Matuš MatejVincze TomášHanic MichalStuchlikova LubicaWeis Martin - Transmission electron microscopy (TEM) analyses of cross-sectional lamellae prepared by a Ga+-focused ion beam are frequently applied in a variety of scientific disciplines where high-resolution information is required from a specific site of interest. Radiation-sensitive materials thereby require dedicated methods to facilitate an analysis of the specimen in its pristine state. Here, we present a method for preparing TEM lamellae of organic thin-film transistors that preserves morphology and crystal structure of beam-sensitive small-molecule organic semiconductor thin films as demonstrated for pentacene, dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene (DNTT), and phenylalkyl-substituted 3,4,9,10-benzo[de]isoquinolino[1,8-gh]-quinolinetetra-carboxylic diimide (PhC2-BQQDI). The two key measures are minimizing electron and ion irradiation of the organic layer using protective layers and optimized beam conditions, and performing the final lamella thinning at reduced temperature. Monte-Carlo simulations can help to find the optimum beam settings, but channeling of electrons and ions, typically not considered in the simulations, can lead to an increased penetration depth and needs to be taken into account. As proof of concept for a successful TEM sample preparation workflow we demonstrate the edge-on growth of all investigated molecules with structural integrity. Furthermore, the zone axes for pentacene and DNTT and the existence of a previously unknown thin-film polymorph of the organic semiconductor PhC2-BQQDI are identified. - Source: PubMed
Hettler SimonZschieschang UteKlauk HagenPeterlechner MartinEggeler Yolita M - The aim of the current study was to analyze the effectiveness of concentrated freshly squeezed tea juice added to dried Nigari tea tofu (DNTT) at three different concentrations (3%, 6% and 9%) compared to the control (0%). Among the supplemented groups, DNTT6 exhibited the highest hardness (11,302.08 g) and gumminess (9997.37 g) values. Meanwhile, it demonstrated a higher percentage of β-sheet structure (49.28%) and an increase in antioxidant activity. Furthermore, DNTT6 also improved bioaccessibility and digestibility and formed a dense, and well-defined gel microstructure owing to possible interactions between polyphenols and proteins, as revealed by molecular dynamics modeling. Although DNTT9 showed an increased antioxidant potential, it decreased the hardness, gumminess and formed a lower β-sheet structure (36.57%), likely due to excessive polyphenol disrupting the protein structure. These outcomes provide a theoretical and practical basis for producing functional soy products with improved nutritional and antioxidant properties. - Source: PubMed
Publication date: 2026/06/29
He Mei-XuanKhalifa IbrahimZeng Xiao-MinZheng JianZhang WenSu Zhu-ChengWalayat NomanWei Ran - Achieving simultaneously high operational stability and low-voltage operation is critical for the practical deployment of organic field-effect transistors (OFETs) in flexible and integrated electronics. However, the heterogeneous organic semiconductors (OSCs)/dielectric interface, where carriers are transported, inevitably introduces defects originating from structural and energetic disorder that lead to instability. Here, we demonstrate that the insulating alkyl chains could serve as a dielectric component to fabricate alkylated OFETs. This interface-free OSC/dielectric configuration reduces interfacial defects and enables efficient charge transport with intrinsic structural passivation. Under this configuration, the 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C-DNTT) FET exhibits operational stability over 10,000 s and an ultrahigh intrinsic gain of 7.52 × 10. The corresponding inverters show exceptional static (gains of 127.6 and noise margin of 95.3% at V = 2.5 V) and dynamic characteristics (signal-delay time constants of 50 μs at V = 1 V), with negligible shift over 50 switch cycles, demonstrating excellent electrical performance and reliability of low-voltage organic circuits. This molecular-level OSC/dielectric integration strategy provides a general pathway for addressing key limitations for the practical deployment of OFETs in flexible and integrated electronics. - Source: PubMed
Publication date: 2026/06/06
Qi JiannanXue JialuLi XufanWang ZhongwuHuang YinanHu YongxuChen XiaosongLi Liqiang - Transmission electron microscopy has been employed to investigate the microstructure of nanocrystalline vacuum-deposited thin films of the small-molecule organic semiconductor 2,9-diphenyl-dinaphtho[2,3-b:2,3-f]thieno[3,2-]thiophene (DPh-DNTT) in functional bottom-gate organic thin-film transistors (TFTs) using both cross-sectional and plan-view specimens. Since the charge transport in organic TFTs is confined to the first molecular layer adjacent to the interface with the gate dielectric, the microstructure of this first molecular layer is of critical importance for the TFT performance, and transmission electron microscopy (TEM) is the most powerful technique to analyze this buried molecular layer. Direct imaging reveals that the DPh-DNTT molecules are oriented edge-on with their long axis in the vertical configuration with respect to the gate dielectric surface. An additional phase in which the DPh-DNTT molecules are oriented in the face-on configuration is observed in the protrusions that typically form in vacuum-deposited DPh-DNTT thin films; however, this face-on configuration is found only on top of layers in which the DPh-DNTT molecules are in the edge-on configuration. This suggests that the edge-on configuration serves as a template for the growth of the face-on configuration. - Source: PubMed
Publication date: 2026/03/18
Hettler SimonZschieschang UteKlauk HagenPeterlechner MartinEggeler Yolita M